If the plasma etch depth of your device is important, then you need the LEP400.

Within minutes the LEP400 can be fitted to just about any plasma etch machine that has a clear normal incidence view of the wafer being etched. This is usually through a small window port in the centre of the top electrode. Most modern etch machines come with such a central window as standard and most manufacturers will supply a modified electrode upon request. If you have any doubts about your particular plasma etch tool then feel free to contact us for advice.

The LEP400 plasma etch depth monitors provide THE real-time process control solution for a wide range of dry etch applications including semiconductors, optoelectronics, MEMS, failure analysis and general thin film removal.

The instrument offers in-situ monitoring solutions with excellent noise rejection and reduced set-up costs for both production and R&D environments. The system includes a user-friendly Windows™-based environment for input, control and visualisation. EtchDirector© software calculates the etch rate and etch depth in real time enabling enhanced control of process termination.

The LEP400 is designed to operate either as a standalone tool, or to be integrated into an OEM etch tool through a simple and robust communications interface.

Accuracy & Precision:

These depend upon the specific etch process conditions. However, if we take an example process of:
       Etch Rate = 100 nm min-1, sample rate = 5 Hz

      Intrinsic Etch Depth Accuracy: ± 0.67 nm
      Intrinsic Etch Depth Precision: ± 0.17 nm

However, above and beyond its extreme level of accuracy and precision, one of the major benefits of the LEP400 is the ability to

     Hit your target etch depth

                           First Time & Every Time !